| 147 | 0 | 290 |
| 下载次数 | 被引频次 | 阅读次数 |
以硅纳米孔柱阵列(Si-NPA)为衬底,采用化学气相沉积技术在不同条件下制备了GaN/Si-NPA,并对其表面形貌和结构进行了表征.结果表明,随着制备温度和氨气流量的升高,GaN/Si-NPA中GaN纳米结构的形貌发生显著变化,特征尺寸逐渐变大.对样品光致发光谱的测试结果表明,不同温度制备的GaN/Si-NPA均具有紫外光、黄光和红光3个发光带,但发光带的强度、峰位和半高宽随制备温度发生变化.对GaN/Si-NPA的光致发光过程与发光机制进行了分析,通过改变制备条件可以对其光致发光特性实现有效调控.
Abstract：Utilizing silicon nanoporous pillar array( Si-NPA) as substrates,a series of GaN/Si-NPA samples were prepared at different temperatures and ammonia flux by a chemical vapor deposition method. The characterization on the surface morphologies and microstructures disclosed that both the morphology and the featured size of the GaN nanostructures would change with the preparing conditions. The measurement on the photoluminescence( PL) of GaN/Si-NPA illustrated that although all the samples exhibited a PL spectrum composed of an ultraviolet PL band,a yellow PL band and a red PL band. The PL peak intensity,peak position and its full width at half maximum changed largely with the preparing temperature. The analyses on the PL process and mechanism combined with the preparing procedure and the structural characteristics of GaN/Si-NPA demonstrated that an effective control on the PL properties could be realized through changing the preparing conditions.
[1]KROST A,DADGAR A.Ga N-based optoelectronics on silicon substrates[J].Materials science and engineering B,2002,93(1/2/3):77-84.
[2]LUPINA L,ZOELLNER M H,NIERMANN T,et al.Zero lattice mismatch and twin-free single crystalline Sc N buffer layer for Ga N growth on silicon[J].Applied physics letters,2015,107(20):201907.
[3]SELVARAJ S L,SUZUE T,EGAWA T.Breakdown enhancement of Al Ga N/Ga N HEMTs on 4-in silicon by improving the Ga N quality on thick buffer layers[J].IEEE electron device letters,2009,30(6):587-589.
[4]ZUBIA D,ZAIDI S H,HERSEE S D,et al.Nanoheteroepitaxy:nanofabrication route to improved epitaxial growth[J].Journal of vacuum science and technology B,2000,18(6):3514-3520.
[5]XU H J,LI X J.Silicon nanoporous pillar array:a silicon hierarchical structure with high light absorption and triple-band photoluminescence[J].Optics express,2008,16(5):2933-2941.
[6]YAN L L,WANG X B,LIU W K,et al.Effect of boron doping on the rectification effect and photovoltaic performance of Cd S/Si heterostructure based on Si nanoporous pillar array[J].Journal of physics D:applied physics,2015,48(26):265101.
[7]LI X J,JIANG W F.Enhanced field emission from a nest array of multi-walled carbon nanotubes grown on a silicon nanoporous pillar array[J].Nanotechnology,2007,18(6):731-735.
[8]LI W L,YAN W H,LI X J,et al.Capacitive humidity sensing properties of Zn O cauliflowers grown on silicon nanoporous pillar array[J].Sensors and actuators B:chemical,2013,177(2):740-744.
[9]HAN C B,HE C,MENG X B,et al.Effect of annealing treatment on electroluminescence from Ga N/Si nanoheterostructure array[J].Optics express,2012,20(5):5636-5643.
[10]PARK E,SHIM S,HA R,et al.Reassembling of Ni and Pt catalyst in the vapor-liquid-solid growth of Ga N nanowires[J].Materials letters,2011,65(15/16):2458-2461.
[11]LEROUX M,GRANDJEAN N,BEAUMONT B,et al.Temperature quenching of photoluminescence intensities in undoped and doped Ga N[J].Journal of applied physics,1999,86(7):3721-3278.
[12]RESHCHIKOV M A,MORKOC H.Luminescence properties of defects in Ga N[J].Journal of applied physics,2005,97(6):061301.
[13]LI Y,WANG X B,FAN Z Q,et al.Temperature-dependent photoluminescence of silicon nanoporous pillar array[J].Chinese physics letters,2014,31(4):170-173.
基本信息:
DOI：10.13705/j.issn.1671-6841.2016197
中图分类号:O482.31;TN304
引用信息:
[1]刘伟康,杜蕊,朱文亮,等.基于硅纳米孔柱阵列氮化镓纳米结构的光致发光特性[J],2017,49(02):102-106.DOI:10.13705/j.issn.1671-6841.2016197.
基金信息:
国家自然科学基金项目(61176044)
2016-04-01
2016
2016-07-25
2016
1